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BUK7613-75B - N-channel TrenchMOS standard level FET

Datasheet Summary

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features

  • Low conduction losses due to low on-state resistance.
  • Q101 compliant.
  • Suitable for standard level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Datasheet Details

Part number BUK7613-75B
Manufacturer NXP Semiconductors
File Size 162.76 KB
Description N-channel TrenchMOS standard level FET
Datasheet download datasheet BUK7613-75B Datasheet
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D2 PA K BUK7613-75B N-channel TrenchMOS standard level FET Rev. 3 — 27 December 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Q101 compliant  Suitable for standard level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V, 24 V and 42 V loads  Automotive systems  General purpose power switching  Motors, lamps and solenoids 1.4 Quick reference data Table 1.
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