BUK761R8-30C Datasheet | NXP Semiconductors

N-channel Trench MOS standard level FET Rev. 02 - 20 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using NXP Ultra High-Performance (UHP) automotive Trench MOS technology. 1.2 Features - 175 °C rated - Standard level patible - Q101 pliant - Trench MOS technology 1.3 Applications - 12 V loads - General purpose power switching - Automotive systems - Motors, lamps and solenoids 1.4 Quick reference data Table 1. ID Ptot RDSon Quick reference Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1 and 4 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 and 13 [1][2] Symbol Parameter drain current total power dissipation drain-source on-state resistance Min - Typ 1.5 Max 100 333 1.8 Unit A W mΩ Static characteristics Avalanche ruggedness ID = 100 A; Vsup ≤ 30 V; EDS(AL)S non-repetitive drain-source avalanche RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C energy [1] [2] Refer to document 9397 750 12572 for further information. Continuous current is limited by package. - - NXP Semiconductors N-channel Trench MOS standard level...