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BUK761R8-30C - N-Channel MOSFET

General Description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology.

Key Features

  • 175 °C rated.
  • Standard level compatible.
  • Q101 compliant.
  • TrenchMOS technology 1.3.

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Full PDF Text Transcription for BUK761R8-30C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK761R8-30C. For precise diagrams, and layout, please refer to the original PDF.

BUK761R8-30C N-channel TrenchMOS standard level FET Rev. 02 — 20 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode powe...

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roduct profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features „ 175 °C rated „ Standard level compatible „ Q101 compliant „ TrenchMOS technology 1.3 Applications „ 12 V loads „ General purpose power switching „ Automotive systems „ Motors, lamps and solenoids 1.4 Quick reference data Table 1.

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