BUK7623-75A Datasheet | NXP Semiconductors

D2 PA K N-channel TrenchMOS standard level FET Rev. 2 - 2 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - AEC Q101 pliant - Low conduction losses due to low on-state resistance - Suitable for standard level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V, 24 V and 42 V loads - Automotive and general purpose power...