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BUK764R0-75C - N-channel TrenchMOS standard level FET

Description

Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications.

Features

  • AEC-Q101 compliant.
  • Avalanche robust.
  • Suitable for standard level gate drive.
  • Suitable for thermally demanding environment due to 175 °C rating 1.3.

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Datasheet Details

Part number BUK764R0-75C
Manufacturer NXP Semiconductors
File Size 191.05 KB
Description N-channel TrenchMOS standard level FET
Datasheet download datasheet BUK764R0-75C Datasheet

Full PDF Text Transcription

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D2 PA K BUK764R0-75C N-channel TrenchMOS standard level FET Rev. 2 — 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC-Q101 compliant „ Avalanche robust „ Suitable for standard level gate drive „ Suitable for thermally demanding environment due to 175 °C rating 1.3 Applications „ 12 V Motor, lamp and solenoid loads „ High performance automotive power systems „ High performance Pulse Width Modulation (PWM) applications 1.4 Quick reference data Table 1.
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