Datasheet Summary
D2 PA K
N-channel TrenchMOS standard level FET
Rev. 2
- 26 April 2011 Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications.
1.2 Features and benefits
- AEC-Q101 pliant
- Avalanche robust
- Suitable for standard level gate drive
- Suitable for thermally demanding environment due to 175 °C rating
1.3 Applications
- 12 V Motor, lamp and solenoid loads
- High performance automotive power systems
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