• Part: BUK7Y12-55B
  • Description: N-channel TrenchMOS standard level FET
  • Manufacturer: NXP Semiconductors
  • Size: 194.47 KB
Download BUK7Y12-55B Datasheet PDF
BUK7Y12-55B page 2
Page 2
BUK7Y12-55B page 3
Page 3

Datasheet Summary

N-channel TrenchMOS standard level FET Rev. 03 - 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - Q101 pliant - Suitable for standard level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V and 24 V loads - Advanced braking systems (ABS) - Automotive systems - General purpose power...