BUK7Y35-55B Datasheet | NXP Semiconductors

N-channel Trench MOS standard level FET Rev. 04 - 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - Q101 pliant - Suitable for standard level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V and 24 V loads - Advanced braking systems (ABS) - Automotive systems - Engine management - General purpose power switching - Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 55 V 28.4 A 3 60 W Static characteristics RDSon VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 12; see Figure 13 28 35 mΩ Avalanche ruggedness EDS(AL)S non-repetitive ID = 28.43 A; Vsup ≤ 55 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge ID = 15 A; VDS = 44 V; VGS = 10 V; see Figure 14 33 m J Dynamic characteristics QGD 5.34 n C NXP Semiconductors N-channel Trench MOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol 1 2 3...