Datasheet4U Logo Datasheet4U.com

BUK9212-55B - TrenchMOS logic level FET

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Key Features

  • s Very low on-state resistance s 185 °C rated s Q101 compliant s Logic level compatible. 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUK9214-30A N-Channel MOSFET NXP
BUK9217-75B N-channel TrenchMOS logic level FET nexperia
BUK9219-55A N-Channel MOSFET NXP
BUK9225-55A N-channel TrenchMOS logic level FET NXP
BUK9226-75A N-channel TrenchMOS logic level FET nexperia

Other Datasheets by NXP Semiconductors

Part Number Description
BUK9213-30A TrenchMOS logic level FET
BUK9214-75B TrenchMOS logic level FET
BUK9215-55A TrenchMOS logic level FET
BUK92150-55A TrenchMOS logic level FET
BUK9217-75B N-channel TrenchMOS logic level FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com BUK9212-55B TrenchMOS™ logic level FET M3D300 Rev. 02 — 12 December 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 185 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 173 mJ s ID ≤ 75 A s RDSon = 10.2 mΩ (typ) s Ptot ≤ 167 W. 2.