BUK9516-55A Datasheet | NXP Semiconductors

TO -22 0A B N-channel TrenchMOS logic level FET Rev. 02 - 21 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - AEC Q101 pliant - Low conduction losses due to low on-state resistance 1.3 Applications - Automotive and general purpose power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power...