BUK9535-55A
BUK9535-55A is N-Channel MOSFET manufactured by NXP Semiconductors.
description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
- Low conduction losses due to low on-state resistance
1.3 Applications
- Automotive and general purpose power switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C ID = 14 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C Min Typ 24 26 Max Unit 55 34 85 32 35 49 V A W mΩ mΩ m J
Static characteristics
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy
NXP Semiconductors
N-channel Trench MOS logic level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description
G D S D gate drain source mounting base; connected to drain mbb076
Simplified outline mb
Graphic symbol
1 2 3
SOT78A (TO-220AB)
3. Ordering information
Table 3. Ordering information Package Name BUK9535-55A TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78A Type number
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj VGSM IS ISM EDS(AL)S Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature peak gate-source voltage source current peak source current non-repetitive drain-source avalanche energy pulsed; tp ≤ 50 µs Tmb = 25 °C pulsed; Tmb = 25 °C ID = 14 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Tmb = 100 °C Tmb = 25 °C Tmb = 25 °C; pulsed Tmb = 25 °C...
