BUK954R8-60E
Overview
Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
- AEC Q101 compliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating
- True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C 1.3 Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching 1.4 Quick reference data Table
- Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11 [1] Min - Typ - Max 60 100 234 Unit V A W Static characteristics drain-source on-state resistance gate-drain charge 4 4.9 mΩ Dynamic characteristics QGD VGS = 5 V; ID = 25 A; VDS = 48 V; Fig. 13; Fig. 14 [1] Continuous current is limited by package. -
