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BUK9606-40B - N-Channel MOSFET

Download the BUK9606-40B datasheet PDF. This datasheet also covers the BUK9506-40B variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Product availability: BUK9506-40B in SOT78 (TO-220AB) BUK9606-40B in SOT404 (D2-PAK).

Key Features

  • s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BUK9506-40B-NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by NXP Semiconductors

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BUK95/9606-40B TrenchMOS™ logic level FET Rev. 01 — 14 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK9506-40B in SOT78 (TO-220AB) BUK9606-40B in SOT404 (D2-PAK). 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 494 mJ s ID ≤ 75 A s RDSon = 5.7 mΩ (typ) s Ptot ≤ 203 W. 2.