Datasheet Summary
D2 PA K
N-channel TrenchMOS logic level FET
Rev. 02
- 16 February 2011 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
- AEC Q101 pliant
- Low conduction losses due to low on-state resistance
- Suitable for logic level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
- 12 V and 24 V loads
- Automotive and general purpose power switching
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