BUK962R2-40C Datasheet | NXP Semiconductors

N-channel Trench MOS logic level FET Rev. 02 - 17 April 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - Low conduction losses due to low on-state resistance - Suitable for logic level gate drive sources - Q101 pliant - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V loads - General purpose power switching - Automotive systems - Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot EDS(AL)S Quick reference Parameter drain-source voltage drain current total power dissipation non-repetitive drain-source avalanche energy gate-drain charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tj = 25 °C; see Figure 1 and 4 Tmb = 25 °C; see Figure 2 ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped VGS = 5 V; ID = 25 A; VDS = 32 V; see Figure 14 VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 12, 11 and 13 [1][2] Min - Typ - Max 40 100 333 1.2 Unit V A W J Avalanche ruggedness Dynamic characteristics QGD 73 n C Static characteristics RDSon drain-source on-state resistance 2 2.2 mΩ [1] [2] Continuous current is limited by package. Refer to document 9397 750 12572 for further information. NXP Semiconductors N-channel Trench MOS logic level...