Click to expand full text
www.DataSheet4U.com
BUK95/96/9E4R4-40B
TrenchMOS™ logic level FET
Rev. 02 — 13 October 2003 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible.
1.3 Applications
s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 961 mJ s ID ≤ 75 A s RDSon = 3.9 mΩ (typ) s Ptot ≤ 254 W.
2.