Datasheet4U Logo Datasheet4U.com

BUK9K35-60E - Dual N-Channel MOSFET

Datasheet Summary

Description

Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

2.

Features

  • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) > 0.5 V @ 175 °C 3.

📥 Download Datasheet

Datasheet preview – BUK9K35-60E

Datasheet Details

Part number BUK9K35-60E
Manufacturer NXP Semiconductors
File Size 299.75 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet BUK9K35-60E Datasheet
Additional preview pages of the BUK9K35-60E datasheet.

📁 Similar Datasheet

Other Datasheets by NXP Semiconductors

Full PDF Text Transcription

Click to expand full text
LF BUK9K35-60E 23 April 2013 PA K 56D Dual N-channel TrenchMOS logic level FET Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) > 0.5 V @ 175 °C 3. Applications • • • • • 12 V Automotive systems Motors, lamps and solenoid control Start-stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1.
Published: |