Datasheet Summary
N-channel TrenchMOS logic level FET
Rev. 03
- 2 June 2008 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
- Low conduction losses due to low on-state resistance
- Suitable for logic level gate drive sources
- Q101 pliant
- Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
- Air bag
- Automotive transmission control
- Fuel pump...
