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BUK9Y19-100E - MOSFET

Description

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

2.

12 V, 24 V and 48 V Automotive sy

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Datasheet Details

Part number BUK9Y19-100E
Manufacturer NXP Semiconductors
File Size 323.83 KB
Description MOSFET
Datasheet download datasheet BUK9Y19-100E Datasheet
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LF BUK9Y19-100E 6 November 2013 PA K 56 N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Applications • • • • 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 3. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig.
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