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BUK9Y19-55B - N-channel TrenchMOS logic level FET

Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Features

  • s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3.

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Datasheet Details

Part number BUK9Y19-55B
Manufacturer NXP Semiconductors
File Size 129.46 KB
Description N-channel TrenchMOS logic level FET
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www.DataSheet4U.com BUK9Y19-55B N-channel TrenchMOS™ logic level FET M3D748 Rev. 01 — 28 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 91 mJ s ID ≤ 40 A s RDSon = 16.3 mΩ (typ) s Ptot ≤ 75 W. 2.
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