Datasheet4U Logo Datasheet4U.com

BUK9Y30-75B - N-channel TrenchMOS logic level FET

Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Features

  • s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3.

📥 Download Datasheet

Datasheet preview – BUK9Y30-75B

Datasheet Details

Part number BUK9Y30-75B
Manufacturer NXP Semiconductors
File Size 129.97 KB
Description N-channel TrenchMOS logic level FET
Datasheet download datasheet BUK9Y30-75B Datasheet
Additional preview pages of the BUK9Y30-75B datasheet.
Other Datasheets by NXP Semiconductors

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com BUK9Y30-75B N-channel TrenchMOS™ logic level FET M3D748 Rev. 01 — 14 July 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V, and 42 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 89 mJ s ID ≤ 30 A s RDSon = 25 mΩ (typ) s Ptot ≤ 75 W. 2.
Published: |