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BUK9Y30-75B
N-channel TrenchMOS™ logic level FET
M3D748
Rev. 01 — 14 July 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible.
1.3 Applications
s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V, and 42 V loads s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 89 mJ s ID ≤ 30 A s RDSon = 25 mΩ (typ) s Ptot ≤ 75 W.
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