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BUK9Y53-100B
N-channel TrenchMOS logic level FET
Rev. 01 — 30 August 2007 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
I Very low on-state resistance I 175 °C rated I Q101 compliant I Logic level compatible
1.3 Applications
I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 V, 24 V and 42 V loads
1.4 Quick reference data
I EDS(AL)S ≤ 85 mJ I ID ≤ 23 A I RDSon = 45 mΩ (typ) I Ptot ≤ 75 W
2. Pinning information
Table 1.
BUK9Y53-100B Datasheet
