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CGY1032 - 1 GHz - 32 dB gain GaAs push-pull amplifier

Datasheet Summary

Description

Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field Effect Transistor (HFET) GaAs dies.

Features

  • Excellent linearity, stability and reliability Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermally optimized design Superior levels of ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).
  • Integrated ring wave surge protection.
  • Power gain is specified for both 870 MHz and 1003 MHz bandwidth 1.3 A.

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Datasheet Details

Part number CGY1032
Manufacturer NXP Semiconductors
File Size 119.94 KB
Description 1 GHz - 32 dB gain GaAs push-pull amplifier
Datasheet download datasheet CGY1032 Datasheet
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Full PDF Text Transcription

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CGY1032 1 GHz, 32 dB gain GaAs push-pull amplifier Rev. 1 — 10 February 2011 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field Effect Transistor (HFET) GaAs dies. 1.2 Features and benefits „ „ „ „ „ „ „ „ Excellent linearity, stability and reliability Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermally optimized design Superior levels of ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) „ Integrated ring wave surge protection „ Power gain is specified for both 870 MHz and 1003 MHz bandwidth 1.
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