• Part: NE600
  • Description: 1GHz LNA and mixer
  • Manufacturer: NXP Semiconductors
  • Size: 209.10 KB
Download NE600 Datasheet PDF
NXP Semiconductors
NE600
DESCRIPTION The NE/SA600 is a bined low noise amplifier (LNA) and mixer designed for high-performance low-power munication systems from 800-1200MHz. The low-noise preamplifier has a 2d B noise .. figure at 900MHz with 16d B gain and an IM3 intercept of -10d Bm at the input. Input and output impedances are 50Ω and the gain is stabilized by on-chip pensation to vary less than ±0.5d B over the -40 to +85°C temperature range. The wide-dynamic-range mixer has a 14d B noise figure and IM3 intercept of +6d Bm at the input at 900MHz. Mixer input impedance is 50Ω with an open-collector output. The chip incorporates an option so the LNA can be disabled and replaced by a through connection. The amplifier IM3 intercept increases to +26d Bm in this mode; thus, large signals can be handled. The nominal current drawn from a single 5V supply is 13m A and 4.2m A in the LNA thru mode. PIN CONFIGURATION D Package 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC GNDB RF INA GNDA1 BYPASS GNDLO LOIN VCCMX IFOUT GNDMX RF...