PBHV8540T Datasheet | NXP Semiconductors

500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 - 5 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP plement: PBHV9040T. 1.2 Features I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified 1.3 Applications I I I I I I I .. Electronic ballast for fluorescent lighting LED driver for LED chain module LCD backlighting High Intensity Discharge...