PBRP123ET - PNP 800 mA

Product Overview

NXP Semiconductors

Datasheet Details

Part number	PBRP123ET
Manufacturer	NXP Semiconductors
File Size	151.73 KB
Description	PNP 800 mA
Datasheet	PBRP123ET Datasheet
Additional preview pages of the PBRP123ET datasheet.

Product details

Description

www.DataSheet4U.com 800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.NPN complement: PBRN123ET.1.2

Features

I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simpliﬁes circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3.

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Published: Jan 4, 2009 |