PBRP123ET Datasheet PNP 800 Ma

Manufacturer: NXP Semiconductors

Overview: PBRP123ET PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 01 — 16 January 2008 Product data sheet 1. Product proﬁle 1.

Datasheet Details

Part number	PBRP123ET
Manufacturer	NXP Semiconductors
File Size	151.73 KB
Description	PNP 800 mA
Datasheet	PBRP123ET_NXPSemiconductors.pdf

General Description

800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

NPN plement: PBRN123ET.

Key Features

I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simpliﬁes circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3.

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Brand Logo	Part Number	Description	Other Manufacturers
	PBRP123YT	PNP 800 MA	NXP

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Datasheet Details

General Description

Key Features

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