PBSS4520X Datasheet | NXP Semiconductors

FEATURES - High h FE and low VCEsat at high current operation - High collector current capability: IC maximum 5 A - Higher efficiency leading to less heat generation. APPLICATIONS - Medium power peripheral drivers, e.g. fans and motors - Strobe flash units for DSC and mobile phones - Inverter applications, e.g. TFT displays - Power switch for LAN and ADSL systems - Medium power DC-to-DC conversion - Battery chargers. DESCRIPTION NPN low VCEsat BISS transistor in a SOT89 (SC-62) plastic package. PNP plement: PBSS5520X. PINNING PIN 1 2 3 emitter collector base QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PARAMETER MAX. UNIT 20 5 10 44 V A A mΩ collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance DESCRIPTION MARKING TYPE NUMBER PBSS4520X Note 1. - = p: made in Hong Kong - = t: made in Malaysia - = W: made in China. ORDERING INFORMATION - 1F MARKING CODE(1) 1 sym042 Fig.1 Simplified outline (SOT89) and symbol. PACKAGE TYPE NUMBER NAME PBSS4520X SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89 2004 Nov 08 Philips Semiconductors .. Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICRM ICM IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) repetitive peak collector current peak collector current base current (DC) peak base current total power dissipation tp ≤ 1 ms Tamb ≤ 25 °C notes 1 and 2 note 2 note 3 note 4 note 5 Tstg Tj Tamb Notes 1. Operated under pulsed conditions: pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. storage temperature junction temperature ambient temperature - - - - - - 65 - - 65 notes 1 and 2 tp ≤ 1 ms CONDITIONS open emitter open base open collector - - - -...