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PBSS4520X - 20V 5A NPN low VCEsat (BISS) transistor

General Description

NPN low VCEsat BISS transistor in a SOT89 (SC-62) plastic package.

PNP complement: PBSS5520X.

MAX.

Key Features

  • High hFE and low VCEsat at high current operation.
  • High collector current capability: IC maximum 5 A.
  • Higher efficiency leading to less heat generation.

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DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET ook, halfpage M3D109 PBSS4520X 20 V, 5 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2004 Jun 11 2004 Nov 08 Philips Semiconductors www.DataSheet4U.com Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor FEATURES • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 5 A • Higher efficiency leading to less heat generation. APPLICATIONS • Medium power peripheral drivers, e.g. fans and motors • Strobe flash units for DSC and mobile phones • Inverter applications, e.g. TFT displays • Power switch for LAN and ADSL systems • Medium power DC-to-DC conversion • Battery chargers.