PBSS5520X Description
PNP low VCEsat (BISS) transistor in a SOT89 (SC-62) plastic package. PINNING PIN 1 2 3 emitter collector base QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PARAMETER PBSS5520X MAX. −20 −5 −10 54 UNIT V A A mΩ collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance DESCRIPTION 2 3 MARKING TYPE NUMBER PBSS5520X Note.
PBSS5520X Key Features
- High hFE and low VCEsat at high current operation
- High collector current IC: 5 A
- High efficiency leading to less heat generation