PDTB113E Datasheet | NXP Semiconductors

description 500 m A PNP Resistor-Equipped Transistors (RET) family. Table 1. Product overview Package NXP PDTB113EK PDTB113ES[1] PDTB113ET [1] Type number NPN plement JEITA SC-59A SC-43A JEDEC TO-236 TO-92 TO-236AB PDTD113EK PDTD113ES PDTD113ET SOT346 SOT54 SOT23 Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features - Built-in bias resistors - Simplifies circuit design - 500 m A output current capability - Reduces ponent count - Reduces pick and place costs - ±10 % resistor ratio tolerance 1.3 Applications - Digital application in automotive and industrial segments - Controlling IC inputs - Cost-saving alternative for BC807 series in digital applications - Switching loads 1.4 Quick reference data Table 2. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor 1 (input) bias resistor ratio Conditions open base Min 0.7 0.9 Typ 1.0 1.0 Max - 50 - 500 1.3 1.1 Unit V m A kΩ NXP Semiconductors PDTB113E series PNP 500 m A resistor-equipped transistors;.. R1 = 1 kΩ, R2 = 1 kΩ 2. Pinning information Table 3. Pin SOT54 1 2 3 input (base) output (collector) GND (emitter) 1 2 3 001aab347 006aaa148 Pinning Description Simplified outline Symbol 2 R1 1 R2 3 SOT54A 1 2 3 input (base) output (collector) GND (emitter) 1 2 3 001aab348 006aaa148 2 R1 1 R2 3 SOT54 variant 1 2 3 input (base) output (collector) GND...