PDTB114ET Datasheet | NXP Semiconductors

FEATURES - Built-in bias resistors R1 and R2 (typ. 10 kΩ each) - Simplification of circuit design - Reduces number of ponents and board space. APPLICATIONS - Especially suitable for space reduction in interface and driver circuits - Inverter circuit configurations without use of external resistors. handbook, 4 columns 3 3 R1 1 R2 2 1 2 MAM100 Top view Fig.1 Simplified outline (SOT23) and symbol. DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. NPN plement: PDTD114ET. 1 3 2 MARKING TYPE NUMBER PDTB114ET MARKING CODE p09 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output MGA893 - 1 Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot h FE R1 R2 ------R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = - 50 m A; VCE = - 5 V CONDITIONS open base - - - - 56 7 0.8 MIN. - - - - - 10 1 TYP. MAX. - 50 - 500 - 500 250 - 13 1.2 kΩ UNIT V m A m A m W 1997 Sep 02 Philips Semiconductors .. Objective specification PNP resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 - - - - - - 65 - - 65 CONDITIONS open emitter open base open...