PDTB114ET Overview
PNP resistor-equipped transistor in a SOT23 plastic package. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 ------R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = −50 mA; VCE = −5 V CONDITIONS open base − − − − 56 7 0.8 MIN.
PDTB114ET Key Features
- Built-in bias resistors R1 and R2 (typ. 10 kΩ each)
- Simplification of circuit design
- Reduces number of ponents and board space
PDTB114ET Applications
- Especially suitable for space reduction in interface and driver circuits
