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PDTB114ET - PNP resistor-equipped transistor

General Description

PNP resistor-equipped transistor in a SOT23 plastic package.

NPN complement: PDTD114ET.

Equivalent inverter symbol.

Key Features

  • Built-in bias resistors R1 and R2 (typ. 10 kΩ each).
  • Simplification of circuit design.
  • Reduces number of components and board space.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 1997 Sep 02 Philips Semiconductors www.DataSheet4U.com Objective specification PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 10 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. handbook, 4 columns PDTB114ET 3 3 R1 1 R2 2 1 2 MAM100 Top view Fig.1 Simplified outline (SOT23) and symbol.