PDTB114ET Datasheet PDF - NXP Semiconductors PNP resistor-equipped transistor Specs

PDTB114ET - PNP resistor-equipped transistor

Datasheet Summary

Description

PNP resistor-equipped transistor in a SOT23 plastic package.

NPN complement: PDTD114ET.

Equivalent inverter symbol.

Features

Built-in bias resistors R1 and R2 (typ. 10 kΩ each).
Simplification of circuit design.
Reduces number of components and board space.

Datasheet Details

Part number	PDTB114ET
Manufacturer	NXP Semiconductors
File Size	2.07 MB
Description	PNP resistor-equipped transistor
Datasheet	PDTB114ET Datasheet
Additional preview pages of the PDTB114ET datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor Objective speciﬁcation Supersedes data of February 1995 File under Discrete Semiconductors, SC04 1997 Sep 02 Philips Semiconductors www.DataSheet4U.com Objective speciﬁcation PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 10 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. handbook, 4 columns PDTB114ET 3 3 R1 1 R2 2 1 2 MAM100 Top view Fig.1 Simplified outline (SOT23) and symbol.

Published: Apr 21, 2010 |