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PH2520U - N-channel TrenchMOS ultra low level FET

Datasheet Summary

Description

Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features

  • Higher operating power due to low thermal resistance.
  • Interfaces directly with low voltage gate drivers.
  • Low conduction losses due to low on-state resistance 1.3.

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Datasheet Details

Part number PH2520U
Manufacturer NXP Semiconductors
File Size 229.28 KB
Description N-channel TrenchMOS ultra low level FET
Datasheet download datasheet PH2520U Datasheet
Additional preview pages of the PH2520U datasheet.

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www.DataSheet4U.net PH2520U N-channel TrenchMOS ultra low level FET Rev. 03 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Higher operating power due to low thermal resistance „ Interfaces directly with low voltage gate drivers „ Low conduction losses due to low on-state resistance 1.3 Applications „ DC-to-DC convertors „ Notebook computers „ Portable equipment „ Switched-mode power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 4.
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