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PH3855L
N-channel TrenchMOS™ logic level FET
Rev. 01 — 26 January 2005 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.
1.2 Features
s Logic level threshold s Surface mounted package.
1.3 Applications
s DC-to-DC converters s Motors, lamps, solenoids s General purpose power switching s 12 V and 24 V loads.
1.4 Quick reference data
s VDS ≤ 55 V s RDSon ≤ 36 mΩ s ID ≤ 24 A s Qgd = 5.5 nC (typ).
2. Pinning information
Table 1: Pin 1, 2, 3 4 mb Pinning Description source gate mounting base; connected to drain
mb
Simplified outline
Symbol
D
G
mbb076
S
1
2
3
4
Top view
SOT669 (LFPAK)
Philips Semiconductors
w w w .
PH3855L Datasheet
