PH7030L Datasheet | NXP Semiconductors

N-channel Trench MOS logic level FET Rev. 05 - 29 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only. 1.2 Features and benefits - Higher operating power due to low thermal resistance - Low conduction losses due to low on-state resistance - Suitable for logic level gate drive sources 1.3 Applications - DC-to-DC convertors - Notebook puters - Portable equipment - Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Dynamic characteristics QGD gate-drain charge VGS = 5 V; ID = 20 A; VDS = 10 V; Tj = 25 °C; see Figure 11 Static characteristics RDSon drain-source on-state...