Datasheet4U Logo Datasheet4U.com

PH9030L - N-channel TrenchMOS logic level FET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Key Features

  • High efficiency due to low switching and conduction losses.
  • Suitable for logic level gate drive sources 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PH9085.011NL Isolation Power Transformers Pulse
PH9085.012NL Isolation Power Transformers Pulse
PH9085.021NL Isolation Power Transformers Pulse
PH9085.034NL Isolation Power Transformers Pulse
PH9085.035NL Isolation Power Transformers Pulse

Other Datasheets by NXP Semiconductors

Part Number Description
PH9025L N-channel TrenchMOS logic level FET
PH955L N-channel TrenchMOS logic level FET
PH97005 Low cost DECT Power Amplifier
PH9930L N-channel TrenchMOS logic level FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PH9030L N-channel TrenchMOS logic level FET Rev. 01 — 29 July 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ DC-to-DC convertors „ Notebook computers „ Portable equipment „ Switched-mode power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Min Typ Max 30 63 62.