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PHB110NQ08T - N-Channel MOSFET

Datasheet Summary

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features

  • Low conduction losses due to low on-state resistance.
  • Suitable for standard level gate drive sources 1.3.

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Datasheet Details

Part number PHB110NQ08T
Manufacturer NXP Semiconductors
File Size 174.20 KB
Description N-Channel MOSFET
Datasheet download datasheet PHB110NQ08T Datasheet
Additional preview pages of the PHB110NQ08T datasheet.

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Full PDF Text Transcription

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PHB110NQ08T N-channel TrenchMOS standard level FET Rev. 02 — 12 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Suitable for standard level gate drive sources 1.3 Applications „ DC-to-DC convertors „ General industrial applications „ Motors, lamps and solenoids „ Uninterruptible power supplies 1.4 Quick reference data Table 1.
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