Datasheet Summary
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N-channel TrenchMOS™ standard level FET
Rev. 01
- 08 March 2004
M3D300
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.
1.2 Features s Low on-state resistance s Fast switching.
1.3 Applications s DC-to-DC converters s General purpose switching.
1.4 Quick reference data s VDS ≤ 200 V s Ptot ≤ 150 W s ID ≤ 21.1 A s RDSon ≤ 120 mΩ.
2. Pinning information
Table 1: Pin 1 2 3 mb Pinning
- SOT428 (D-PAK), simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; connected to drain (d)
2 1 Top view 3
MBK091
Simplified...