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PHX18NQ11T - N-channel TrenchMOS standard level FET

General Description

N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology.

Key Features

  • s Low on-state resistance s Isolated mounting base s Fast switching s Low thermal resistance 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHX18NQ11T N-channel TrenchMOS™ standard level FET M3D308 Rev. 01 — 13 February 2004 Product data 1. Product profile 1.1 Description www.DataSheet4U.com N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology. 1.2 Features s Low on-state resistance s Isolated mounting base s Fast switching s Low thermal resistance 1.3 Applications s DC-to-DC converters s Switched-mode power supplies 1.4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 31.2 W s ID ≤ 12.5 A s RDSon ≤ 90 mΩ 2.