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PMCPB5530X
020 -6
20 V, complementary Trench MOSFET
Rev. 1 — 26 June 2012 Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
DF
N2
1.2 Features and benefits
Very fast switching Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction
1.3 Applications
Charging switch for portable devices DC-to-DC converters Small brushless DC motor drive Power management in battery-driven portables Hard disc and computing power management
1.4 Quick reference data
Table 1.
PMCPB5530X Datasheet
