PMDPB38UNE - 20V dual N-channel Trench MOSFET

Product Overview

NXP Semiconductors

Datasheet Details

Part number	PMDPB38UNE
Manufacturer	NXP Semiconductors
File Size	210.57 KB
Description	20V dual N-channel Trench MOSFET
Datasheet	PMDPB38UNE Datasheet
Additional preview pages of the PMDPB38UNE datasheet.

Product details

Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Very fast switching.
Trench MOSFET technology.
Leadless medium power SMD plastic package: 2 × 2 × 0.6 mm.
Exposed drain pad for excellent thermal conduction.
ESD protection up to 1.6 kV 1.3.

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Published: Aug 16, 2014 |