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PMEG2010EV - Low VF MEGA Schottky barrier diode

General Description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package.

Key Features

  • Forward current: 1 A.
  • Reverse voltage: 20 V.
  • Very low forward voltage.
  • Ultra small SMD package.
  • Flat leads: excellent coplanarity and improved thermal behaviour.

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2010EV Low VF MEGA Schottky barrier diode Product specification Supersedes data of 2002 Jun 24 2003 Aug 20 www.DataSheet4U.com Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode FEATURES • Forward current: 1 A • Reverse voltage: 20 V • Very low forward voltage • Ultra small SMD package • Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS • Low voltage rectification • High efficiency DC/DC conversion • Switch mode power supply • Inverse polarity protection • Low power consumption applications.