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PMEG2010EV

Manufacturer: NXP Semiconductors

PMEG2010EV datasheet by NXP Semiconductors.

PMEG2010EV datasheet preview

PMEG2010EV Datasheet Details

Part number PMEG2010EV
Datasheet PMEG2010EV_NXPSemiconductors.pdf
File Size 86.66 KB
Manufacturer NXP Semiconductors
Description Low VF MEGA Schottky barrier diode
PMEG2010EV page 2 PMEG2010EV page 3

PMEG2010EV Overview

Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package. Fig.1 Simplified outline (SOT666) and symbol. LIMITING VALUES In accordance with the Rating System (IEC 60134) SYMBOL VR IF IFSM Tstg Tj Tamb Note.

PMEG2010EV Key Features

  • Forward current: 1 A
  • Reverse voltage: 20 V
  • Very low forward voltage
  • Ultra small SMD package
  • Flat leads: excellent coplanarity and improved thermal behaviour

PMEG2010EA from other manufacturers

View PMEG2010EA datasheet index

Brand Logo Part Number Description Other Manufacturers
Philips Logo PMEG2010EA Low VF (MEGA) Schottky barrier diode Philips
nexperia Logo PMEG2010EH MEGA Schottky barrier rectifiers nexperia
nexperia Logo PMEG2010EJ MEGA Schottky barrier rectifiers nexperia
nexperia Logo PMEG2010EPA MEGA Schottky barrier rectifier nexperia
nexperia Logo PMEG2010ER MEGA Schottky barrier rectifier nexperia
NXP Semiconductors logo - Manufacturer

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