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PMEG2010EV

PMEG2010EV is Low VF MEGA Schottky barrier diode manufactured by NXP Semiconductors.
PMEG2010EV datasheet preview

PMEG2010EV Datasheet

Part number PMEG2010EV
Download PMEG2010EV Datasheet (PDF)
File Size 86.66 KB
Manufacturer NXP Semiconductors
Description Low VF MEGA Schottky barrier diode
PMEG2010EV page 2 PMEG2010EV page 3

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PMEG2010EV Distributor

PMEG2010EV Description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package. Fig.1 Simplified outline (SOT666) and symbol. LIMITING VALUES In accordance with the Rating System (IEC 60134) SYMBOL VR IF IFSM Tstg Tj Tamb Note.

PMEG2010EV Key Features

  • Forward current: 1 A
  • Reverse voltage: 20 V
  • Very low forward voltage
  • Ultra small SMD package
  • Flat leads: excellent coplanarity and improved thermal behaviour

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