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PMF780SN - N-channel uTrenchMOS standard level FET

General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Key Features

  • s Surface mounted package s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching. 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMF780SN N-channel µTrenchMOS™ standard level FET Rev. 01 — 10 February 2004 M3D102 Product data 1. Product profile 1.1 Description www.DataSheet4U.com N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Surface mounted package s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching. 1.3 Applications s Driver circuits s Switching in portable appliances. 1.4 Quick reference data s VDS ≤ 60 V s Ptot ≤ 0.56 W s ID ≤ 0.57 A s RDSon ≤ 920 mΩ. 2.