PMGD280UN Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
PMGD280UN is Dual N-channel mTrenchMOS ultra low level FET manufactured by NXP Semiconductors.
| Part Number | Description |
|---|---|
| PMGD290XN | Dual N-channel mTrenchMOS extremely low level FET |
| PMGD780SN | Dual N-channel mTrenchMOS standard level FET |
| PMGD8000LN | Dual UTrenchMOS logic level FET |
| PMG370XN | N-channel mTrenchMOS extremely low level FET |
| PMG85XP | MOSFET |
Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.