PMGD780SN - Dual N-channel mTrenchMOS standard level FET

Datasheet Summary

Description

Dual N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology.

Features

s Surface mounted package s Standard level threshold voltage s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching s Dual device. 1.3.

NXP Semiconductors

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Datasheet Details

Part number	PMGD780SN
Manufacturer	NXP Semiconductors
File Size	120.94 KB
Description	Dual N-channel mTrenchMOS standard level FET
Datasheet	PMGD780SN Datasheet
Additional preview pages of the PMGD780SN datasheet.

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www.DataSheet4U.com PMGD780SN Dual N-channel µTrenchMOS™ standard level FET MBD128 Rev. 01 — 11 February 2004 Product data 1. Product proﬁle 1.1 Description Dual N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Surface mounted package s Standard level threshold voltage s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching s Dual device. 1.3 Applications s Driver circuits s Switching in portable appliances. 1.4 Quick reference data s VDS ≤ 60 V s Ptot ≤ 0.41 W s ID ≤ 0.49 A s RDSon ≤ 920 mΩ. 2.

Published: Mar 25, 2010 |