PMK50XP - P-channel TrenchMOS extremely low level FET

Description

Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features

Low conduction losses due to low on-state resistance 1.3.

NXP Semiconductors

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Datasheet Details

Part number	PMK50XP
Manufacturer	NXP Semiconductors
File Size	180.71 KB
Description	P-channel TrenchMOS extremely low level FET
Datasheet	PMK50XP Datasheet
Additional preview pages of the PMK50XP datasheet.

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Full PDF Text Transcription

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PMK50XP P-channel TrenchMOS extremely low level FET Rev. 02 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low on-state resistance 1.3 Applications Battery management Load switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions 25 °C ≤ Tj ≤ 150 °C Tsp = 25 °C; VGS = -4.

Published: Aug 25, 2014 |