PMN70XPE
Overview
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- 2 kV ESD protection 1.3 Applications
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits 1.4 Quick reference data Table
- Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; ID = -2 A; Tj = 25 °C [1] Conditions Tamb = 25 °C Min -12 - Typ - Max -20 12 -4.1 Unit V V A Static characteristics drain-source on-state resistance [1] 2 - 70 85 mΩ Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . Scan or click this QR code to view the latest information for this product NXP Semiconductors PMN70XPE 20 V, single P-channel Trench MOSFET
