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PMT200EN - MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

  • Logic-level compatible.
  • Very fast switching.
  • Trench MOSFET technology 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMT200EN 25 October 2012 100 V N-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology 1.3 Applications • Relay driver • LED backlight driver • Low-side loadswitch • Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; ID = 1.5 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -20 - Typ - Max 100 20 3.