PMV160UP
description
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- 1.8 V RDSon rated
- Very fast switching
- Trench MOSFET technology
1.3 Applications
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb 25 °C VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -8
- Typ 170
Max -20 8 -1.2 210
Unit V V A mΩ
Static characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2. Pin 1 2 3 Pinning information Symbol Description
G S D gate source drain
1 2
017aaa257
Simplified outline
Graphic...
