PMWD30UN Datasheet | NXP Semiconductors

Dual µTrenchMOS™ ultra low level FET M3D647 .. Rev. 01 - 22 January 2003 Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMWD30UN in SOT530-1 (TSSOP8). 1.2 Features s Surface mounting package s Very low threshold s Low profile s Fast switching. 1.3 Applications s Portable appliances s Battery management s PCMCIA cards s Load switching. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 2.3 W s ID ≤ 5 A s RDSon ≤ 33 mΩ 2. Pinning information Table 1: Pin 1 2,3 4 5 6,7 8 Pinning - SOT530-1, simplified outline and symbol Description drain1...