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PMZ1000UN - N-channel TrenchMOS standard level FET

General Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Key Features

  • Fast switching.
  • Low conduction losses due to low on-state resistance.
  • Saves PCB space due to small footprint (90 % smaller than SOT23).
  • Suitable for use in compact designs due to low profile (55 % lower than SOT23) 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMZ1000UN N-channel TrenchMOS standard level FET Rev. 2 — 17 September 2010 BOTTOM VIEW Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Fast switching „ Low conduction losses due to low on-state resistance „ Saves PCB space due to small footprint (90 % smaller than SOT23) „ Suitable for use in compact designs due to low profile (55 % lower than SOT23) 1.3 Applications „ Driver circuits „ Switching in portable appliances 1.4 Quick reference data Table 1.