Datasheet4U Logo Datasheet4U.com

PMZ250UN - N-channel TrenchMOS extremely low level FET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Key Features

  • I Profile 55 % lower than SOT23 I Lower on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Low threshold voltage I Fast switching 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMZ200UNE N-channel Trench MOSFET NXP
PMZ200UNE N-channel MOSFET nexperia
PMZ290UNE N-channel MOSFET nexperia
PMZ290UNE N-channel Trench MOSFET NXP
PMZ290UNE2 N-channel Trench MOSFET NXP

Other Datasheets by NXP Semiconductors

Part Number Description
PMZ270XN N-channel TrenchMOS extremely low level FET
PMZ1000UN N-channel TrenchMOS standard level FET
PMZ350XN N-channel TrenchMOS standard level FET
PMZ390UN N-channel TrenchMOS standard level FET
PMZ760SN N-channel TrenchMOS standard level FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMZ250UN N-channel TrenchMOS extremely low level FET Rev. 01 — 21 February 2008 BOTTOM VIEW Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features I Profile 55 % lower than SOT23 I Lower on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Low threshold voltage I Fast switching 1.3 Applications I Driver circuits I DC-to-DC converters I Load switching in portable appliances 1.4 Quick reference data I VDS ≤ 20 V I RDSon ≤ 300 mΩ I ID ≤ 2.28 A I Ptot ≤ 2.50 W 2. Pinning information Table 1.