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PMZ270XN - N-channel TrenchMOS extremely low level FET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Key Features

  • I Profile 55 % lower than SOT23 I Low on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Low threshold voltage I Fast switching 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMZ270XN N-channel TrenchMOS extremely low level FET Rev. 01. — 21 February 2008 BOTTOM VIEW Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features I Profile 55 % lower than SOT23 I Low on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Low threshold voltage I Fast switching 1.3 Applications I Driver circuits I DC-to-DC converters I Load switching in portable appliances 1.4 Quick reference data I VDS ≤ 20 V I RDSon ≤ 340 mΩ I ID ≤ 2.15 A I Ptot ≤ 2.50 W 2. Pinning information Table 1.