PSMN004-60B Datasheet | NXP Semiconductors

Description N-channel logic level field-effect power transistor in a plastic package using Trench MOS™ technology. Product availability: PSMN004-60P in SOT78 (TO-220AB) PSMN004-60B in SOT404 (D2-PAK). 2. Features s Low on-state resistance s Fast switching. 3. Applications s High frequency puter motherboard DC to DC converters s OR-ing applications. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g) drain (d) source (s) drain (d) g 2 1 MBK106 Simplified outline [1] mb mb Symbol d MBB076 s MBK116 1 2 3 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) It is not possible to make connection to pin 2 of the SOT404 package. Philips Semiconductors w w w . D a t a S h e e t 4 U . c o m PSMN004-60P/60B N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A; Tj = 25 °C Typ 3.1 Max 60 75 230 175 3.6 Unit V A W °C mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) gate-source voltage drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDD = 15 V; RGS = 50 Ω; VGS = 10 V; starting Tj = 25 °C unclamped inductive load; VDD = 15 V; RGS = 50 Ω; VGS = 10 V; starting Tj = 25 °C tp ≤ 50 µs; pulsed; duty cycle 25%; Tj ≤ 150 °C Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 Tmb = 25...